• What's The Dc Arc Plasma Jet?
    • DC arc plasma jet was introduced to the field of the diamond film synthesis in late 1980s. It heats the Ar/CH4/H2 gas mixtureuses to high temperature plasma that is more than 3000k by DC arc discharge, and then eject with high speed on the substrate to form diamond films. The whole equipment is composed of vacuum deposite chamber,DC high voltage current source, discharge cathode and anode, gas input system, react gas system, water cooling desk and etc.
    • The basic process of DC arc plasma jet is inflicting DC voltage between pole cathode and circular anode. Arc will be generated when the gas flow into the electric field. Then the gas will be heated. The high temperature and inflated gas jet from anode nozzle with high speed will form plasma jet current. The starting arc gas is argon. When introducing the reacting gas methane and hydrogen after the plasma jet current, the CH4/H2 gas mixture is ionized by the high temperature plasma and jeted onto the substrate, which was on the water-cooling desk. Then diamond films would nucleate and generate on the substrate. Due to the high energy density of plasma and the hydrogen atom from the concomitant reaction, the density of methyl radicle and other activate radicle are very high. Hence the DC arc plasma jet CVD has a high diamond depositing speed and can be used for large area deposition.
    • Because arc plasma has the characteristic of high temperature and high heat, several of gases in the plasma will be decomposed and ionized fully. When the plasma jets to the relative low temperature substrate with high speed, a great deal of active atoms and radicals will not be compounded in time. It is so favor to diamond depositon when high supersaturation of hydrogen atoms and active radicals (such as CH3 and C2H2) are generated that DC arc plasma jet can enhance the growth speed two orders than the other CVD methods.